The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jan. 18, 2006
Solomon Assefa, Elmsford, NY (US);
Michael C. Gaidis, Wappingers Falls, NY (US);
Sivananda Kanakasabapathy, Hopewell Junction, NY (US);
John P. Hummel, Millbrook, NY (US);
David W. Abraham, Croton-on-Hudson, NY (US);
Solomon Assefa, Elmsford, NY (US);
Michael C. Gaidis, Wappingers Falls, NY (US);
Sivananda Kanakasabapathy, Hopewell Junction, NY (US);
John P. Hummel, Millbrook, NY (US);
David W. Abraham, Croton-on-Hudson, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.