The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Mar. 31, 2006
Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning
Qiquan Geng, San Jose, CA (US);
Jeff J Xu, San Jose, CA (US);
Everett B Lee, Los Altos, CA (US);
Michael T RU, Santa Clara, CA (US);
Hsu-en Yang, San Jose, CA (US);
Chung Hui, San Jose, CA (US);
Qiquan Geng, San Jose, CA (US);
Jeff J Xu, San Jose, CA (US);
Everett B Lee, Los Altos, CA (US);
Michael T Ru, Santa Clara, CA (US);
Hsu-en Yang, San Jose, CA (US);
Chung Hui, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously, another portion of thee first radicals remove the underlying layer near the base of the photoresists. The first radicals may be fluorine-rich and the second radicals may be carbon-rich.