The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Oct. 01, 2007
Iwamichi Kohjiro, Komoro, JP;
Yasuhiro Nunogawa, Yachiho-mura, JP;
Sakae Kikuchi, Takasaki, JP;
Shizuo Kondo, Takasaki, JP;
Tetsuaki Adachi, Toubu-machi, JP;
Osamu Kagaya, Tokyo, JP;
Kenji Sekine, Hinode-machi, JP;
Eiichi Hase, Iruma, JP;
Kiichi Yamashita, Shiroyama-machi, JP;
Iwamichi Kohjiro, Komoro, JP;
Yasuhiro Nunogawa, Yachiho-mura, JP;
Sakae Kikuchi, Takasaki, JP;
Shizuo Kondo, Takasaki, JP;
Tetsuaki Adachi, Toubu-machi, JP;
Osamu Kagaya, Tokyo, JP;
Kenji Sekine, Hinode-machi, JP;
Eiichi Hase, Iruma, JP;
Kiichi Yamashita, Shiroyama-machi, JP;
Renesas Technology Corp., Tokyo, JP;
Hitachi Tohbu Semiconductor, Ltd., Saitama, JP;
Abstract
In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.