The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Jul. 12, 2007
Soo Hyun Kim, Seoul, KR;
Baek Mann Kim, Kyoungki-do, KR;
Young Jin Lee, Kyoungki-do, KR;
Sun Woo Hwang, Kyoungki-do, KR;
Dong Ha Jung, Kyoungki-do, KR;
Jeong Tae Kim, Kyoungki-do, KR;
Soo Hyun Kim, Seoul, KR;
Baek Mann Kim, Kyoungki-do, KR;
Young Jin Lee, Kyoungki-do, KR;
Sun Woo Hwang, Kyoungki-do, KR;
Dong Ha Jung, Kyoungki-do, KR;
Jeong Tae Kim, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a barrier film over the interlayer insulation film including a surface of the hole; forming a first metal film over the barrier film so as to fill in the hole; forming a bit line contact plug in the hole by removing the first metal film and the barrier film so as to expose the interlayer insulation film; carrying out a gas treatment to a surface of the interlayer insulation film including the bit line contact plug so as to promote a growth of metal nucleation; forming a second metal film over the gas treated interlayer insulation film; and forming a bit line in contact with the bit line contact plug by etching the second metal film.