The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2009

Filed:

Jul. 27, 2005
Applicants:

Kenji Kanamitsu, Hitachinaka, JP;

Kouzou Watanabe, Kokubunji, JP;

Norio Suzuki, Mito, JP;

Norio Ishitsuka, Niihari, JP;

Inventors:

Kenji Kanamitsu, Hitachinaka, JP;

Kouzou Watanabe, Kokubunji, JP;

Norio Suzuki, Mito, JP;

Norio Ishitsuka, Niihari, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.


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