The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Apr. 03, 2007
Applicants:
Ming-daou Lee, Hsinchu, TW;
Chia-hua Ho, Hsinchu, TW;
Erh-kun Lai, Hsinchu, TW;
Kuang-yeu Hsieh, Hsinchu, TW;
Inventors:
Ming-Daou Lee, Hsinchu, TW;
Chia-Hua Ho, Hsinchu, TW;
Erh-Kun Lai, Hsinchu, TW;
Kuang-Yeu Hsieh, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8244 (2006.01);
U.S. Cl.
CPC ...
Abstract
A resistance type memory device is provided. The resistance type memory device is disposed on a substrate and includes a tungsten electrode, an upper electrode, and a tungsten oxide layer. The upper electrode is disposed on the tungsten electrode. The tungsten oxide layer is sandwiched between the tungsten electrode and the upper electrode.