The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Jan. 16, 2004
Yasuo Kitaoka, Ibaraki, JP;
Hisashi Minemoto, Hirakata, JP;
Isao Kidoguchi, Kawanishi, JP;
Akihiko Ishibashi, Mishima-gun, JP;
Yasuo Kitaoka, Ibaraki, JP;
Hisashi Minemoto, Hirakata, JP;
Isao Kidoguchi, Kawanishi, JP;
Akihiko Ishibashi, Mishima-gun, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The present invention provides a manufacturing method that makes it possible to manufacture a substrate that is formed of high-quality Group III nitride crystals alone and has less warping. A Group III nitride layer (a seed layer and a selective growth layer) including gaps is formed on a substrate (a sapphire substrate). In an atmosphere containing nitrogen, the surface of the Group III nitride layer is brought into contact with a melt containing alkali metal and at least one Group III element selected from gallium, aluminum, and indium, and thereby the at least one Group III element and the nitrogen are made to react with each other to grow Group III nitride crystals (GaN crystals) on the Group III nitride layer. Thereafter, a part including the substrate and a part including the Group III nitride crystals are separated from each other in the vicinities of the gaps.