The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Oct. 23, 2007
Applicants:
Fumitaka Arai, Yokohama, JP;
Yasuhiko Matsunaga, Kawasaki, JP;
Makoto Sakuma, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Akira Shimizu, Oyama, JP;
Inventors:
Fumitaka Arai, Yokohama, JP;
Yasuhiko Matsunaga, Kawasaki, JP;
Makoto Sakuma, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Akira Shimizu, Oyama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.