The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Apr. 28, 2005
Applicants:
Myoung-jae Lee, Gyeonggi-do, KR;
In-kyeong Yoo, Gyeonggi-do, KR;
Sun-ae Seo, Gyeonggi-do, KR;
Dong-seok Suh, Seoul, KR;
David Seo, Gyeonggi-do, KR;
Sang-hun Jeon, Gyeonggi-do, KR;
Inventors:
Myoung-jae Lee, Gyeonggi-do, KR;
In-kyeong Yoo, Gyeonggi-do, KR;
Sun-ae Seo, Gyeonggi-do, KR;
Dong-seok Suh, Seoul, KR;
David Seo, Gyeonggi-do, KR;
Sang-hun Jeon, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.