The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2009

Filed:

Feb. 23, 2005
Applicants:

Sang-woo Lee, Seoul, KR;

Gil-heyun Choi, Gyeonggi-do, KR;

Sang-bom Kang, Seoul, KR;

Jong-myeong Lee, Gyeonggi-do, KR;

Jin-ho Park, Seoul, KR;

Inventors:

Sang-woo Lee, Seoul, KR;

Gil-heyun Choi, Gyeonggi-do, KR;

Sang-bom Kang, Seoul, KR;

Jong-myeong Lee, Gyeonggi-do, KR;

Jin-ho Park, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a metal wiring in a semiconductor device can include forming an etch stop layer outside a contact hole formed in an insulation layer and avoiding forming the etch stop layer inside the contact hole. A conductive layer can be formed on the etch stop layer outside the contact hole and on an exposed conductive pattern inside the contact hole and on a sidewall of the contact hole and a metal layer can be formed on the conductive layer to fill the contact hole.


Find Patent Forward Citations

Quick Actions:

Lee, Sang-woo. (2009). Methods of forming metal wiring in semiconductor devices using etch stop layers (U.S. Patent No. 7521357). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7521357

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…