The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Jun. 04, 2007
Chun Chieh Wu, Hsinchu, TW;
Chi-feng Huang, Ping-Tung, TW;
Chun-hung Chen, Jhubei, TW;
Chih-ping Chao, Hsin-Chu, TW;
John Chern, Hsin Chu, TW;
Chun Chieh Wu, Hsinchu, TW;
Chi-Feng Huang, Ping-Tung, TW;
Chun-Hung Chen, Jhubei, TW;
Chih-Ping Chao, Hsin-Chu, TW;
John Chern, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.