The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Jul. 28, 2005
Tsunehisa Sakoda, Kawasaki, JP;
Masaomi Yamaguchi, Kawasaki, JP;
Hiroshi Minakata, Kawasaki, JP;
Yoshihiro Sugita, Kawasaki, JP;
Kazuto Ikeda, Kawasaki, JP;
Tsunehisa Sakoda, Kawasaki, JP;
Masaomi Yamaguchi, Kawasaki, JP;
Hiroshi Minakata, Kawasaki, JP;
Yoshihiro Sugita, Kawasaki, JP;
Kazuto Ikeda, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A permeation preventing film of a silicon nitride filmis inserted between a silicon substrateand a High-k gate insulation filmto thereby prevent the High-k gate insulation filmfrom being deprived of oxygen, while oxygen anneal is performed after a gate electrode layerhas been formed to thereby supplement oxygen. The silicon nitride filmwhich is the permeation preventing film, becomes a silicon oxide nitride filmwithout changing the film thickness, whereby characteristics deterioration of the High-k gate insulation filmdue to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.