Semiconductor device and a method of fabricating the same

Abstract

A power MOSFET comprises: a semiconductor substrateof a first conduction type; a drain layerof the first conduction type and formed on a surface layer of the substrate; a gate insulating filmformed in a partial region on the drain layer; a gate electrodeformed on the gate insulating film; an insulating filmformed on the gate electrode; a side wall insulatorformed on side walls of the gate insulating film, the gate electrode, and the insulating film; a recess formed on the drain layerand in a region other than a region where the gate electrodeand the side wall insulatorare formed; a channel layerof a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrodeis formed; a source region layerof the one conduction type and formed on the channel layeroutside the recess; and a wiring layerformed to cover the channel layerwhich is exposed through the recess, the side wall insulator, and the insulating film.