The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2009

Filed:

Aug. 15, 2005
Applicants:

John M. Boyd, Hillsboro, OR (US);

Fritz C. Redeker, Fremont, CA (US);

David J. Hemker, San Jose, CA (US);

Inventors:

John M. Boyd, Hillsboro, OR (US);

Fritz C. Redeker, Fremont, CA (US);

David J. Hemker, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/00 (2006.01); G03F 7/00 (2006.01); F26B 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.


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