The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Oct. 26, 2006
Dong-chan Lim, Yongin-si, KR;
Byung-hee Kim, Seoul, KR;
Tae-ho Cha, Seongnam-si, KR;
Hee-sook Park, Seoul, KR;
Geum-jung Seong, Yongin-si, KR;
Dong-chan Lim, Yongin-si, KR;
Byung-hee Kim, Seoul, KR;
Tae-ho Cha, Seongnam-si, KR;
Hee-sook Park, Seoul, KR;
Geum-jung Seong, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An integrated circuit of a semiconductor device has a line type of pattern that is not prone to serious RC delays. The integrated circuit has a line formed of at least a layer of polycrystalline silicon, a layer of metal having a low sheet resistance, and a layer of a barrier metal interposed between the polycrystalline silicon and the metal having a low sheet resistance, and first spacers disposed on the sides of the line, respectively, and is characterized in that the line has recesses at the sides of the barrier layer and the first spacers fill the recesses. The integrated circuit may constitute a gate line of a semiconductor device. The integrated circuit is formed by forming layers of polycrystalline silicon, metal having a low sheet resistance, and a barrier metal one atop the other, patterning the layers into a line, etching the same to form the recesses, and then forming the first spacers. The etching is preferably a process of etching the barrier layer in situ using an etchant having an etch selectivity between the material of the barrier layer and the materials constituting the other layers of the line.