The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
May. 18, 2007
Applicants:
Hyung-jin Bae, Yongin-si, KR;
Jung-hyun Lee, Yongin-si, KR;
Sang-jun Choi, Yongin-si, KR;
Bum-seok Seo, Yongin-si, KR;
Inventors:
Hyung-jin Bae, Yongin-si, KR;
Jung-hyun Lee, Yongin-si, KR;
Sang-jun Choi, Yongin-si, KR;
Bum-seok Seo, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.
Bae, Hyung-jin. (2009). Nonvolatile variable resistance memory device and method of fabricating the same (U.S. Patent No. 7518213). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7518213
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile