The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Aug. 01, 2006
Takumi Shibata, Tajimi, JP;
Shoichi Yamauchi, Nagoya, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Masaru Hori, Nisshin, JP;
Takumi Shibata, Tajimi, JP;
Shoichi Yamauchi, Nagoya, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Masaru Hori, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The epitaxial layer is made of silicon, and the step of filling the trench includes a step of performing a plasma CVD method with using a silicon source gas. By using anisotropic character of a plasma, the epitaxial layer is selectively deposited on a bottom of the trench. Thus, the trench is filled with the epitaxial layer having no void.