The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Nov. 14, 2006
Thomas W. Dyer, Pleasant Valley, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Jiang Yan, Newburgh, NY (US);
Thomas W. Dyer, Pleasant Valley, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Jiang Yan, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Infineon AG, Munich, DE;
Abstract
Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer reaching a contact area of the semiconductor device, the opening being away from a protected area of the semiconductor device; and filling the opening with a conductive material to form the conductive stud. One embodiment may further include forming a dielectric liner directly on top of the semiconductor device, and forming the protective layer on top of the dielectric liner. Embodiments of the present invention also provide a semiconductor device made thereof.