The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Mar. 14, 2007
Rajiv V. Joshi, Yorktown Heights, NY (US);
Qiuyi YE, Hopewell Junction, NY (US);
Anirudh Devgan, Austin, TX (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Qiuyi Ye, Hopewell Junction, NY (US);
Anirudh Devgan, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for evaluating leakage effects on static memory cell access time provides a mechanism for raising the performance of memory arrays beyond present levels/yields. By altering the states of other static memory cells connected to the same bitline as a static memory cell under test, the effect of leakage on the access time of the cell can be observed. The leakage effects can further be observed while varying the internal symmetry of the memory cell, operating the cell and observing changes in performance caused by the asymmetric operation. The asymmetry can be introduced by splitting one or both power supply rail inputs to the cell and providing differing power supply voltages or currents to each cross-coupled stage.