The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Sep. 15, 2005
Pierre Fazan, Morges, CH;
Serguei Okhonin, Lausanne, CH;
Pierre Fazan, Morges, CH;
Serguei Okhonin, Lausanne, CH;
Innovative Silicon ISi SA, Lausanne, CH;
Abstract
A semiconductor device such as a DRAM memory device is disclosed. A substrate () of semiconductor material is provided with energy band modifying means in the form of a box region () and is covered by an insulating layer (). A semiconductor layer () has source () and drain () regions formed therein to define bodies () of respective field effect transistors. The box region () is more heavily doped than the adjacent body (), but less highly doped than the corresponding source () and drain (), and modifies the valence and/or conduction band of the body () to increase the amount of electrical charge which can be stored in the body ().