The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2009

Filed:

May. 11, 2006
Applicants:

Hsiang Lan Lung, Elmsford, NY (US);

Chiahua Ho, Kaoshing, TW;

Shih Hung Chen, Elmsford, NY (US);

Chieh Fang Chen, Panchiao, TW;

Inventors:

Hsiang Lan Lung, Elmsford, NY (US);

Chiahua Ho, Kaoshing, TW;

Shih Hung Chen, Elmsford, NY (US);

Chieh Fang Chen, Panchiao, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing for providing a narrow line, such as a phase change bridge, on a substrate having a top surface, includes first forming a layer of first material on the substrate. Then, a layer of a pattern material is applied on the layer of first material, and a pattern is defined. The pattern includes a ledge having a sidewall extending substantially to the layer of first material. A sidewall etch mask is formed on the ledge, and used to define a line of the first material on the substrate having a width substantially determined by the width of the sidewall etch mask.


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