The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2009

Filed:

Oct. 10, 2006
Applicants:

Osamu Arisumi, Yokohama, JP;

Masahiro Kiyotoshi, Sagamihara, JP;

Inventors:

Osamu Arisumi, Yokohama, JP;

Masahiro Kiyotoshi, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device, includes preparing a work piece having a trench on its main surface side, forming a polymer film containing a polymer containing silicon, hydrogen and nitrogen on the main surface of the work piece, holding the work piece with the polymer film in a first atmosphere, which contains oxygen, and whose oxygen partial pressure is set in a range of 16 to 48 Torr, oxidizing the polymer film in a second atmosphere containing water vapor to form an oxide film containing a silicon oxide as a main component, after holding the work piece in the first atmosphere, and removing an upper portion of the oxide film to remain a lower portion of the oxide film in the trench.


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