The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2009

Filed:

May. 29, 2007
Applicants:

Shih Hung Chen, Elmsford, NY (US);

Hsiang Lan Lung, Elmsford, NY (US);

Inventors:

Shih Hung Chen, Elmsford, NY (US);

Hsiang Lan Lung, Elmsford, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/8234 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes electrode pairs. Electrode pairs include a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member.


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