The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Jun. 20, 2006
Kalipatnam Vivek Rao, Grafton, MA (US);
Kalipatnam Vivek Rao, Grafton, MA (US);
MEARS Technologies, Inc., Waltham, MA (US);
Abstract
A method for making a semiconductor device may include forming a plurality of shallow trench isolation (STI) regions in a semiconductor substrate. Further, a plurality of layers may be deposited over the substrate to define respective superlattices over the substrate between adjacent STI regions and to define respective non-monocrystalline regions over the STI regions. The method may further include selectively removing at least portions of the non-monocrystalline regions using at least one active area (AA) mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile