The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
May. 20, 2005
Yoshihiro Sugita, Kawasaki, JP;
Yoshihiro Sugita, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A p-well () is formed on a surface of an Si substrate () and element isolation insulating films () are formed. Next, a thin SiOfilm () is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and aluminum (Al) is formed thereon as an insulating film (). Furthermore, a polysilicon film () is formed on the insulating film (). After that, the SiOfilm () and the insulating film () are allowed to react with each other by performing a heat treatment, for example, at approximately 1000° C. to form a silicate film containing the rare earth metal and Al. In a word, the SiOfilm () and the insulating film () are allowed to be a single silicate film.