The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Jul. 10, 2006
Wesley Lin, Chu-Pai, TW;
Fang-shi Jordan Lai, Chia Yi, TW;
Chia-fu Lee, Hsinchu, TW;
Sheng Chi Lin, Hsinchu, TW;
Ping-wei Wang, Hsin-Chu, TW;
Chang-yun Chang, Taipei, TW;
Tang-xuan Zhong, Kaohsiung, TW;
Tsung-lin Lee, Hsinchu, TW;
Wesley Lin, Chu-Pai, TW;
Fang-Shi Jordan Lai, Chia Yi, TW;
Chia-Fu Lee, Hsinchu, TW;
Sheng Chi Lin, Hsinchu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Chang-Yun Chang, Taipei, TW;
Tang-Xuan Zhong, Kaohsiung, TW;
Tsung-Lin Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.