The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Dec. 27, 2005
Der-chyang Yeh, Hsin-Chu, TW;
Chuan-ying Lee, Hsinchu, TW;
Victor P. C. Yeh, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A high-frequency noise isolation structure and a method for forming the same are provided. The noise isolation structure isolates a first device region and a second device region over a semiconductor substrate. The noise isolation structure preferably includes a sinker region substantially encircling a first device region, a buried layer underlying the first device region and joining the sinker region, a deep guard ring substantially encircling the sinker region, and a deep trench oxide region substantially encircling the sinker region. The isolation structure further includes a wide guard ring between the first and the second device regions. The sinker region and the buried region preferably have a high impurity concentration. Integrated circuits to be noise decoupled are preferably formed in the respective first and second device regions.