The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Dec. 08, 2005
Yong-kyu Lee, Suwon, KR;
Jeong-uk Han, Suwon, KR;
Sung-taeg Kang, Seoul, KR;
Jong-duk Lee, Seoul, KR;
Byung-gook Park, Seoul, KR;
Yong-kyu Lee, Suwon, KR;
Jeong-uk Han, Suwon, KR;
Sung-taeg Kang, Seoul, KR;
Jong-duk Lee, Seoul, KR;
Byung-gook Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A twin-ONO-type SONOS memory includes a semiconductor substrate having a source region, a drain region and a channel region between the source and drain regions, twin silicon oxide-silicon nitride-silicon oxide (ONO) dielectric layers, a first ONO dielectric layer being on the channel region and the source region and as second ONO dielectric layer being on the channel region and the drain region, and a control gate on the channel region, between the twin ONO dielectric layers, the twin ONO dielectric layers extending along at least lower lateral sides of the control gate adjacent the channel region, wherein the twin ONO dielectric layers extend towards the source and drain regions further than the control gate.