The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Jun. 09, 2006
Thomas N. Adam, Poughkeepsie, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Joel P. DE Souza, Putnam Valley, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
Thomas N. Adam, Poughkeepsie, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Joel P. de Souza, Putnam Valley, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming an isolation region using porous silicon and a related structure are disclosed. One embodiment of the method may include forming a collector region; forming a porous silicon region in the collector region; forming a crystalline silicon intrinsic base layer over the collector region, the intrinsic base layer extending over a portion of the porous silicon region to form an extrinsic base; and forming an isolation region in the porous silicon region. The method is applicable to forming an HBT having a structure including a crystalline silicon intrinsic base extending beyond a collector region and extending over an isolation region to form a continuous intrinsic-to-extrinsic base conduction path of low resistance. The HBT has improved performance by having a smaller collector to intrinsic base interface and larger intrinsic base to extrinsic base interface.