The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Nov. 14, 2005
Ronald N. Reece, Westwood, MA (US);
Serguei I. Kondratenko, Swampscott, MA (US);
Geumjoo Ra, North Andover, MA (US);
Louis P. Wainwright, Beverly, MA (US);
Gary N. Cai, Beverly, MA (US);
Ronald N. Reece, Westwood, MA (US);
Serguei I. Kondratenko, Swampscott, MA (US);
Geumjoo Ra, North Andover, MA (US);
Louis P. Wainwright, Beverly, MA (US);
Gary N. Cai, Beverly, MA (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.