The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Mar. 07, 2006
Yasuhiro Satoh, Yokohama, JP;
Tsukasa Nakai, Hino, JP;
Sumio Ashida, Yokohama, JP;
Shoko Suyama, Kawasaki, JP;
Yoshiyasu Ito, Yokohama, JP;
Yasuhiro Satoh, Yokohama, JP;
Tsukasa Nakai, Hino, JP;
Sumio Ashida, Yokohama, JP;
Shoko Suyama, Kawasaki, JP;
Yoshiyasu Ito, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A sputtering target contains Si and C as its major components and includes a texture in which a Si phase continuously exists in a net shape in gaps among SiC crystal grains. An average diameter of the Si phase is controlled to 1000 nm or less. The sputtering target is sputtered in an oxygen-containing gas, thereby depositing an optical thin film containing Si and O as its major components, and a third element other than the major components, a total amount of the third element being within a range from 10 to 2000 ppm.