The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Oct. 18, 2006
Applicant:
Chieh Fang Chen, Panchiao, TW;
Inventor:
Chieh Fang Chen, Panchiao, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8244 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory cell device, including a memory material element switchable between electrical property states by the application of energy, includes depositing an electrical conductor layer, depositing dielectric material layers and etching to create a first electrode and voids. A memory material is applied into a void to create a memory material element in contact with the first electrode. A second electrode is created to contact the memory material element.