The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Dec. 26, 2002
Mark Bohr, Aloha, OR (US);
Julie Tsai, Beaverton, OR (US);
Mark Bohr, Aloha, OR (US);
Julie Tsai, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
The present invention discloses a method including: providing a substrate; forming a buried oxide layer over the substrate; forming a thin silicon body layer over the buried oxide layer, the thin silicon body layer having a thickness of 3-40 nanometers; forming a pad oxide layer over the thin silicon body layer; forming a silicon nitride layer over the pad oxide layer; forming a photoresist over the silicon nitride layer; forming an opening in the photoresist; removing the silicon nitride layer in the opening; partially or completely removing the pad oxide layer in the opening; removing the photoresist over the silicon nitride layer; forming a field oxide layer from the thin silicon body layer in the opening; removing the silicon nitride layer over the pad oxide layer; and removing the pad oxide layer over the thin silicon body layer. The present invention also discloses a structure including: a substrate; a buried oxide layer located over the substrate; a thin silicon body layer located over the buried oxide layer, the thin silicon body layer including active areas separated by isolation regions, the isolation regions having a modified bird's beak length that is 30-60% of a thickness of the thin silicon body layer; and a fully-depleted device located in each of the active regions.