The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7510919 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 31, 2009

Filed:

Jul. 12, 2005
Applicants:

Jean-charles Barbe, Grenoble, FR;

Maud Vinet, Grenoble, FR;

Béatrice Drevet, Grenoble, FR;

Carine Jahan, Grenoble, FR;

Inventors:

Jean-Charles Barbe, Grenoble, FR;

Maud Vinet, Grenoble, FR;

Béatrice Drevet, Grenoble, FR;

Carine Jahan, Grenoble, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring. This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.


Find Patent Forward Citations

Loading…