The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Apr. 26, 2006
Hsiao-kuo Chang, Taipei, TW;
Jen-sheuan Huang, Taipei, TW;
Chih-peng Chen, Taipei, TW;
Na-ling Chen, Taipei, TW;
Shih-pang Wen, Taipei, TW;
Hsiao-Kuo Chang, Taipei, TW;
Jen-Sheuan Huang, Taipei, TW;
Chih-Peng Chen, Taipei, TW;
Na-Ling Chen, Taipei, TW;
Shih-Pang Wen, Taipei, TW;
Kinik Company, Taipei, TW;
Abstract
A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.