The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Aug. 02, 2005
Minoru Yamagami, Tokyo, JP;
Minoru Yamagami, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor integrated circuit device includes a main region on which a main circuit is formed and a spare cell region for logic modification of the circuit formed on the main region. The spare cell region includes a P-channel transistor region, an N-channel transistor region, a plurality of gate electrodes provided above the P-channel transistor region and the N-channel transistor region, a main wire layer that is a different layer from the gate electrodes, and a plurality of bypass wires that are formed at a different layer from the main wire layer. Each of the plurality of bypass wires has a structure that can be connected to the main wire layer at more than one point through contact holes formed in a dielectric layer intervening between the main wire layer and the bypass wires.