The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Apr. 13, 2006
Michael Yang, Palo Alto, CA (US);
Aron Rosenfeld, Palo Alto, CA (US);
Hooman Hafezi, Redwood City, CA (US);
Zhi-wen Sun, San Jose, CA (US);
John Dukovic, Palo Alto, CA (US);
Michael Yang, Palo Alto, CA (US);
Aron Rosenfeld, Palo Alto, CA (US);
Hooman Hafezi, Redwood City, CA (US);
Zhi-Wen Sun, San Jose, CA (US);
John Dukovic, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.