The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Apr. 06, 2005
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, Iii, Delmar, NY (US);
Larry A. Nesbit, Williston, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, III, Delmar, NY (US);
Larry A. Nesbit, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention relates generally to a method for fabricating oxygen-implanted semiconductors, and more particularly to a method for fabricating oxygen-implanted silicon-on-insulation ('SOI') type semiconductors by cutting-up regions into device-sized pieces prior to the SOI-oxidation process. The process sequence to make SOI is modified so that the implant dose may be reduced and relatively long and high temperature annealing process steps may be shortened or eliminated. This simplification may be achieved if, after oxygen implant, the wafer structure is sent to pad formation, and masking and etching. After the etching, annealing or oxidation process steps may be performed to create the SOI wafer.