The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Mar. 19, 2007
Kozo Watanabe, Tokyo, JP;
Shoji Yoshida, Tokyo, JP;
Masashi Sahara, Tokyo, JP;
Shinichi Tanabe, Kodaira, JP;
Takashi Hashimoto, Tokyo, JP;
Kozo Watanabe, Tokyo, JP;
Shoji Yoshida, Tokyo, JP;
Masashi Sahara, Tokyo, JP;
Shinichi Tanabe, Kodaira, JP;
Takashi Hashimoto, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and ntype semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSilayer is formed over the ntype semiconductor region and the gate electrode by applying a heat treatment to the substrate. After a silicon nitride film is deposited over the substrate and an aperture reaching the substrate is formed by removing the silicon nitride film and the silicon oxide film at the anode formation part of the Schottky barrier diode, a Ti film is deposited over the substrate including the inside of the aperture, and a TiSilayer which becomes an anode electrode of the Schottky-barrier diode is formed at the bottom of the aperture by applying a heat treatment to the substrate.