The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2009

Filed:

Nov. 29, 2007
Applicants:

Ulrich Kroll, Corcelles, CH;

Cedric Bucher, Monet-Cudrefin, CH;

Jacques Schmitt, Va Ville du Bois, FR;

Markus Poppeller, Feldkirch, AT;

Christoph Hollenstein, Lutry, CH;

Juliette Ballutaud, Lausanne, CH;

Alan Howling, Cugy, CH;

Inventors:

Ulrich Kroll, Corcelles, CH;

Cedric Bucher, Monet-Cudrefin, CH;

Jacques Schmitt, Va Ville du Bois, FR;

Markus Poppeller, Feldkirch, AT;

Christoph Hollenstein, Lutry, CH;

Juliette Ballutaud, Lausanne, CH;

Alan Howling, Cugy, CH;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.


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