The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Jun. 25, 2001
Shunpei Yamazaki, Tokyo, JP;
Toru Mitsuki, Kanagawa, JP;
Kenji Kasahara, Kanagawa, JP;
Taketomi Asami, Kanagawa, JP;
Tamae Takano, Kanagawa, JP;
Takeshi Shichi, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Toru Mitsuki, Kanagawa, JP;
Kenji Kasahara, Kanagawa, JP;
Taketomi Asami, Kanagawa, JP;
Tamae Takano, Kanagawa, JP;
Takeshi Shichi, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
In a crystalline silicon film fabricated by a related art method, the orientation planes of its crystal randomly exist and the orientation rate relative to a particular crystal orientation is low. A semiconductor material which contains silicon as its main component and 0.1-10 atomic % of germanium is used as a first layer, and an amorphous silicon film is used as a second layer. Laser light is irradiated to crystallize the amorphous semiconductor films, whereby a good semiconductor film is obtained. In addition, TFTs are fabricated by using such a semiconductor film.