The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Jul. 03, 2007
Makoto Ishikawa, Takasaki, JP;
Hirokazu Tsurumaki, Miyogi, JP;
Masahiro Kikuchi, Fujioka, JP;
Hiroyuki Nagai, Takasaki, JP;
Makoto Ishikawa, Takasaki, JP;
Hirokazu Tsurumaki, Miyogi, JP;
Masahiro Kikuchi, Fujioka, JP;
Hiroyuki Nagai, Takasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics is reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.