The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Oct. 06, 2005
Applicants:
Deok-hyung Lee, Seoul, KR;
Yu-gyun Shin, Seongnam-si, KR;
Jong-wook Lee, Yongin-si, KR;
Min-gu Kang, Seoul, KR;
Inventors:
Deok-Hyung Lee, Seoul, KR;
Yu-Gyun Shin, Seongnam-si, KR;
Jong-Wook Lee, Yongin-si, KR;
Min-Gu Kang, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a fin transistor and a planar transistor and a method of forming the same. The fin transistor and the planar transistor are formed to have gate electrodes with similar thicknesses by selectively recessing a semiconductor substrate in a planar region where the planar transistor is formed.