The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Oct. 05, 2005
Min-chul Sun, Suwon-si, KR;
Ja-hum Ku, Seongnam-si, KR;
Brian J. Greene, Yorktown Heights, NY (US);
Manfred Eller, Wappingers Falls, NY (US);
Roman Knoefler, Fishkill, NY (US);
Zhijiong Luo, Carmel, NY (US);
Min-chul Sun, Suwon-si, KR;
Ja-hum Ku, Seongnam-si, KR;
Brian J. Greene, Yorktown Heights, NY (US);
Manfred Eller, Wappingers Falls, NY (US);
Roman Knoefler, Fishkill, NY (US);
Zhijiong Luo, Carmel, NY (US);
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A test structure of a semiconductor device with improved test reliability is provided. The test structure includes first and second active regions which are electrically isolated from each other and on which silicided first and second junction regions are formed, respectively, a semiconductor substrate or a well which is formed on lower parts of the first and second junction regions and has a conductivity type different from the first and second junction regions, and first and second pads through which an electrical signal is applied to the first and second junction regions and detected, and which are formed on the same level as a lower part of a metal layer or on the same level as the semiconductor substrate.