The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Jan. 27, 2005
Takanobu Koshimizu, Nagoya, JP;
Makoto Kataoka, Sodegaura, JP;
Masafumi Miyakawa, Nagoya, JP;
Hideki Fukumoto, Nagoya, JP;
Yoshihisa Saimoto, Nagoya, JP;
Takanobu Koshimizu, Nagoya, JP;
Makoto Kataoka, Sodegaura, JP;
Masafumi Miyakawa, Nagoya, JP;
Hideki Fukumoto, Nagoya, JP;
Yoshihisa Saimoto, Nagoya, JP;
Mitsui Chemicals, Inc., Tokyo, JP;
Abstract
A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer which involves a first step of adhering an adhesive film for protection of a semiconductor wafer in which an adhesive layer is formed on one surface of a base film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of processing a non-circuit-formed surface of the semiconductor wafer by fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer. The method addresses warpage problems and can prevent breakage of wafers during conveyance even if the thickness of a wafer is reduced to approximately 150 μm or less.