The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2009

Filed:

Jun. 21, 2006
Applicants:

Jung-youl Lee, Kyungki-Do, KR;

Jae-woo Lee, Kyungki-Do, KR;

Jae-hyun Kim, Kyungki-Do, KR;

Inventors:

Jung-Youl Lee, Kyungki-Do, KR;

Jae-Woo Lee, Kyungki-Do, KR;

Jae-Hyun Kim, Kyungki-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 1/73 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A polymer including a monomer represented by the following Formula and a photoresist composition including the same are disclosed. The polymer and photoresist composition can improve the resolution and the process margin due to the low activation energy of the deprotection reaction of the alcohol ester group including saturated cyclic hydrocarbyl group, and also can produce fine photoresist patterns because they have a stable PEB(Post Exposure Baking) temperature sensitivity, and further, can improve the focus depth margin and the line edge roughness of the resist layer. In the above Formula, R* is a hydrogen or methyl group, Ris saturated hydrocarbyl group of 1 to 5 carbon atoms, R is mono-cyclic or multi-cyclic homo or hetero saturated hydrocarbyl group of 3 to 50 carbon atoms, and n is an integer of at least 2.


Find Patent Forward Citations

Loading…