The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Sep. 30, 2004
Yo-sep Min, Yongin-si, KR;
Young-jin Cho, Suwon-si, KR;
Yo-sep Min, Yongin-si, KR;
Young-jin Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An amorphous dielectric film for use in a semiconductor device, such as a DRAM, and a method of manufacturing the amorphous dielectric film, includes bismuth (Bi), titanium (Ti), silicon (Si), and oxide (O). The amorphous dielectric film may have a dielectric constant of approximately 60 or higher. The amorphous dielectric film may be expressed by the chemical formula BiTiSiO, where 0.2<x<0.5, 0<y<0.5, and 1.5 <z<2.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile