The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Jan. 31, 2008
Scott Jeffrey Weigel, Allentown, PA (US);
Mark Leonard O'neill, Allentown, PA (US);
Raymond Nicholas Vrtis, Orefield, PA (US);
Dino Sinatore, Whitehall, PA (US);
Scott Jeffrey Weigel, Allentown, PA (US);
Mark Leonard O'Neill, Allentown, PA (US);
Raymond Nicholas Vrtis, Orefield, PA (US);
Dino Sinatore, Whitehall, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.