The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2009

Filed:

May. 14, 2007
Applicants:

Yi-ching Liu, Hsinchu, TW;

I-long Lee, Hsinchu, TW;

Ming-hung Chou, Hsinchu, TW;

Fuja Shone, Hsinchu, TW;

Inventors:

Yi-Ching Liu, Hsinchu, TW;

I-Long Lee, Hsinchu, TW;

Ming-Hung Chou, Hsinchu, TW;

Fuja Shone, Hsinchu, TW;

Assignee:

Skymedi Corporation, Science Park, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A programming method for programming stored bits in floating gates of a flash memory cell or selected flash memory cells of a flash memory array is utilized for applying SSI injection on said flash memory cell or said selected flash memory cells of a flash memory array is disclosed. Constant charges at the drain regions of said flash memory cell or said selected flash memory cells of the flash memory array is implemented with a capacitor and a related switch for suppressing variant injected-charges-related properties in applying the SSI injection. A constant biasing current, which may be implemented with a constant current source or a current mirror equipped with a constant current source, is applied on source regions of said flash memory cell or said selected flash memory cells of the flash memory array for enhancing the suppression of said variant biasing properties.


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