The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Jul. 23, 2004
Toshiharu Kinoshita, Kakamigahara, JP;
Tsuneo Komiyama, Toki, JP;
Toshiharu Kinoshita, Kakamigahara, JP;
Tsuneo Komiyama, Toki, JP;
NGK Insulators, Ltd., Nagoya, JP;
NGK Adrec Co., Ltd., Kani-gun, JP;
Abstract
A silicon nitride-bonded SiC refractory is provided, which includes SiC as a main phase and SiNand/or SiNO as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9. A method for producing a silicon nitride-bonded SiC refractory is also provided, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 μm as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 μm, 10 to 30% by mass of a Si powder of 0.05 to 30 μm, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg.